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| r07ds1113ej0 2 00 rev. 2 .00 page 1 of 39 may 22, 2015 datasheet pd166026t1k intelligent power device 1. overview 1.1 description family: pd166026 t1k is part of 2n d generation intelligent power d evice s (ipd) . this is n- channel high - side switch with charge pump, voltage controlled input, diagnostic feedba ck with proportional load current sense and embedded protection function. family includes up t o 14 de vices depe nding on on - state resistance, package and channel number combination. scalability: variety of on - state resistance combined with standardized pa ckage on pin - out give user high flexibility for unit design depending on target load. robustness: because of advanced protection method, 2nd generation intelligent power devices achieve high robustness against long term and repetitive short circuit condit ion . 1.2 features - built - in charge pump - 3.3v compatible logic interface - low standby current - short circuit protection - shutdown by over current detection - power limitation protection by over load detection (power limitation : current li mitation with delta tch control) - absolute tch over temperature protection - built - in diagnostic function - proportional load current sensing - defined fault signal in case of a bnormal load condition - loss of ground protection - under volt age lock out - active clamp operation at inductive load switch off - cross current protection in case of h - bridge high side usage - aec qualified - rohs compliant 1.3 application - light bulb switching from 40w to 5 5w - switching of all types of 14 v dc grounded loads, such as led, inductor, resistor and capacitor - power supply switch, fail - safe switch of 14v dc grounded system note: the information contained in this document is the one that was obtained when the document was issued, and may be s ubject to change. r07ds1113ej0 2 00 rev. 2 .0 0 may 22, 2015
pd166026t1k datasheet 2. ordering information r07ds1113ej0 2 00 rev. 2 .00 page 2 of 39 may 22, 2015 2. ordering information part no. nick name lead plating packing package UPD166026T1K - e1 - ay nhd016c pure matte sn tape 1500 p/reel 24 - pin power hssop UPD166026T1K - e2 - ay nhd016c pure matte sn tape 1500 p/reel 24 - pin power hssop note: ms l: 1, profile acc. j - std - 20c 2.1 nick name n h d 01 6 c a: to252 - 7 b: 12 - pin power hssop c: 24 - pin power hssop on - state resistance s: single channel d: dual channel q: quad channel nch high - side pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 page 3 of 39 may 22, 2015 3. specification 3.1 block diagram 3.1.1 nch high - side dual device voltage and current definition pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 page 4 of 39 may 22, 2015 3.2 pin configuration 3.2 .1 24- pin power hssop pin configuration pin no. terminal name 1 gnd1 2 n.c. 3 is1 4 n.c. 5 in1 6 n.c. 7 gnd2 8 n.c. 9 is2 10 n.c. 11 in2 12 vcc 13 sen2 14 out2 15 out2 16 out2 17 out2 18 n.c. 19 sen1 20 out1 21 out1 22 out1 23 out1 24 vcc tab vcc pin function for d ual channel terminal name pin function recommended connection gndn ground connection channel n (n=1 to 2) connected to gnd through a 1 0 0 ohm resistor or a diode for reverse current protection refer chapter 6. i n n input signal for channel n (n=1 to 2) c onnected to mcu port through 2 k - 50k serial resistor isn current sense and diagnosis output signal channel n (n=1 to 2) connected to gnd through a 0.67 k - 5k resistor senn sense enable input for channel n (n=1 to 2) connected to mcu port through 2 k - 50k seri al resistor outn protected high - side power o utput channel n (n=1 to 2) connected to load with small 50 - 100nf capacitor in parallel vcc positive power supply for logic supply as well as output power supply connected to battery voltage with small 100nf ca pacitor in parallel n.c. non connection left open 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 tab tab pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 page 5 of 39 may 22, 2015 3.3 absolute maximum ratings ta=25degreec, unless other specified parameter symbol rating unit test condition vcc voltage v cc 28 v vcc voltage at reverse battery condition - v cc - 16 v rl=2ohm , t< 2 m in , rin=2kohm, rsen=2kohm, ris=1kohm, rgnd=100ohm gnd reverse current at reverse battery condition i gnd(rev) 200 ma rl=2ohm , t< 2 min vcc voltage under load dump condition v load dump 4 2 v ri=1ohm, rl= 2ohm , ris=1kohm, rin=2kohm, rsen=2kohm , rgnd=100ohm, t d=400ms , load current i l self limited a total power dissipation for whole device (dc) p d 2.16 w ta=85degreec, d evice on 50mmx50mmx1.5mm epoxy pcb fr4 with 6 c m2 of 70 um copper area voltage at in pin v in - 2 ~ 16 v dc rin=2kohm - 16 at reverse batt ery condition, t< 2 min , rin=2kohm, rsen=2kohm in pin current i in 10 ma dc voltage at is pin v is vcc v dc ris=1kohm - 16 v at reverse battery condition, t<2min, rl=2ohm , ris=1kohm is reverse current at reverse battery condition i is(rev) - 30 ma at rever se battery condition, t< 2 min , rl=2ohm voltage at sen pin v sen - 2 ~ 16 v dc rsen=2kohm - 16 at reverse battery condition, t< 2 min rin=2kohm, rsen=2kohm sen pin current i sen 10 ma dc channel temperature tch - 40 to +150 degreec storage temperature tstg - 55 to +150 degreec esd susceptibility v esd 2000 v hbm aec - q100 - 002 std. r=1.5kohm, c=100pf a ll pin 4000 iec61000 - 4 - 2 std. r=330ohm, c=150pf, 100nf at vcc and out vcc, out 200 v mm aec - q100 - 003 std. r=0ohm, c=200pf inductive load switch - off en ergy dissipation single pulse eas 100 mj vcc=13.5v, tch,start<150degreec, rl=2ohm inductive load switch - off energy dissipation repetitive pulse ear 61 mj vcc=13.5v, tch,start=85degreec, rl=2ohm remark) all voltages re fer to g rou nd pin of the device pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 page 6 of 39 may 22, 2015 3.4 thermal characteristics parameter symbol min typ max unit test condition thermal characteristics rth(ch- a) 30 degree c /w according to jedec jesd51 - 2, - 5, -7 on fr4 2s2p board rth(ch-c) 1.0 degree c/w pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 page 7 of 39 may 22, 2015 3.5 electrical characteristics operation fu nction tch= - 40 to 150degreec, vcc=7 to 18 v, unless other wise specified parameter symbol min typ max unit test condition operating voltage v cc 4 .5 28 v v in =4.5v rl= 2ohm operating current per channel i gnd 2.2 4 ma vin=4.5v output leakage current per cha nnel i l(off) 0.5 a tch=25 c vcc=13.5v, vin=0v, vsen=0v, vis=0v, vout=0v, vgnd=0v 3 tch= - 40~12 5c standby current i cc(off) 0.7 a tch=25 c vcc=13.5v, vin=0v, vsen=0v, vis=0v, vout=0v, vgnd=0v 2 tch= - 40~85 c on - state resistance per channel ron 1 6 mohm tch=25 c , i tc c , i o ee in n otae v i v ee in n otae v i v o ee in n current i i vinv ee in n current i i vinv can in n otae v in v o ee n n otae v n v ee n n otae v n v o ee n n current i n vn v ee n n current i n vn v can n n otae v n v uner otae suton v ccu v uner otae restart v cccr v turn on te ton s vccv, r o turn on ea te ton s turn o te to s turn o ea te to s e rate on vton v s e rate o vto v s tcn rt ton to s vcc to v rt ro vccv, tc to ereec rt ro tcereec ton voutvcc v ater nut sna acte turn on ener oss on vccv,tc c , r o turn o ener oss o drn caabt drcaa o tc c , vccv tc c , vccv remark) all voltages re fer to g rou nd pin of the device 1) not subjected production test , guaranteed by design pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 page 8 of 39 may 22, 2015 protection function tch= - 40 to 150degreec, vcc=7 to 18 v, unless other wise specified parameter symbol min typ max unit test condition over current detection current il(sc) 68 1 14 a vcc=13.5 v, von=5 v, tch=25 c current limitation un der power limitation toggling il(cl) 48 a vcc=13.5v current limitation under absolute thermal toggling il(tt) 19 a vcc=13.5v current limitation trigger threshold during turn - on von(cl1) 2 .0 v vcc=13.5v current limitation trigger threshold during o n - state von(cl2) 0.3 5 v vcc=13.5v current limitation trigger time after input signal positive slope td(cl) 500 s vcc=13.5v absolute thermal shutdown temperature atth 150 c thermal hysteresis for absolute thermal toggling atth,hys 20 c powe r limitation thermal shutdown temperature dtth 50 c power limitation restart temperature dtth,rest art 25 c output clamp at inductive load switch off von,clam p 30 40 v vcc=13.5v, il=40ma, tch=25 c output current while gnd disconnection il(gnd) 1 ma iin=0a, isen=0a, ignd=0a, iis=0a output voltage drop at reverse battery condition vds(rev) 0. 9 v tch=25 c vcc= - 13.5v, rl=2ohm 0. 7 tch=150 c remark) all voltages re fer to g rou nd pin of the device pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 page 9 of 39 may 22, 2015 diagnosis function tch= - 40 to 150degreec, vcc=7 to 18 v, vin=4.5v, vsen=4.5v, unless other wise specified parameter symbol min typ max unit test condition current sense ratio kilis 4640 5800 6960 il=6.0 a 4060 5800 7540 il=1.2 a current sense drift depend on temperature dkilis -5 9 % il=1.8a~3.8a, calibration point: il=4.0 a, vcc=13.5v, tch=25 c - 12 12 % vcc=13.5v, tch,start=25 c , ro ense current oset current is,oset i ense current eaae current is,s vinv, vnv ense current uner aut conto n is,aut vccv, rio vccv, rio vccv, rio mnu outut current or current sense outut ic ii oen oa etecton treso at o state vouto v vin v , tc c out terna current at oen oa conton iouto vin v oen oa etecton ea ater nut neate soe to s vinv to v, voutvouto remark) all voltages ref er to g rou nd pin of the device pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 10 of 39 may 22, 2015 diagnosis function tch= - 40 to 150degreec, vcc=7 to 18 v, vin=4.5v, vsen=4.5v, unless other wise specified parameter symbol min typ max unit test condition s ense current settling time after input signal positive slope tsis(on) 250 s vcc=13.5v, vin=0v to 4.5v, il/ii s=kilis , rl= 2ohm s ense current settling time after input signal negative slope t sis(off) 10 s vin=4.5v to 0v sense current settling time after sense enable during on - state 1) t ssen(on) 20 s vsen=0v to 4.5v, rl= 2ohm sense current settling time afte r sense disable during on- state 1) t ssen(off) 20 s vsen=4.5v to 0v, rl= 2ohm sense current settling time during on - state 1) tsis(lc) 20 s rl=2ohm to 1ohm fault signal delay after over current detection 1) t dsc(fault) 10 s vin=0v to 4.5v, il=il(sc ) fault signal delay after power limitation valid 1) t dpl(fault) 10 s von>von(cl 1) fault signal delay after power limitation invalid 1) t dpl(off) 3 0 s von pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 11 of 39 may 22, 2015 3.6 feature description 3.6.1 driving circuit the high - side output is turned on, if the input pin is over vih . the high - side output is turned off, if the input pin is open or the input pin is below vil . threshold is designed between vih min and vil max with hysteresis. in terminal is pulled down with constant current source. switching a resistive load switching lamps v in v t i v cc 0 0 0 t i i 0 v in v t i 0 0 0 t i i 0 v out v cc 0 0 t on on off off in gnd r esd i in i nternal ground v in pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 12 of 39 may 22, 2015 switching a n inductive load the dynamic clamp circuit works only when the inductive load is switched off. when the inductive load is switched off, the voltage of out falls below 0 v. the gate voltage of sw1 is then nearly equal to gnd. next, the voltage at the source of sw1 (= gate of output mos) falls below the gnd voltage. sw1 is turned on, and the clamp diode is connected to the gate of the output mos, activating the dynamic clam p circuit. when the over - voltage is applied to vcc, the gate voltage and source voltage of sw1 are both nearly equal to gnd. sw1 is not turned on, the clamp diode is not connected to the gate of the output mos, and the dynamic clamp circuit is not act ivated. v cc v on,clamp v in v t i 0 0 0 t i i 0 gnd out zd az v cc internal ground logic r esd r esd zd esd in sen sw 1 is zd az pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 13 of 39 may 22, 2015 3.6.2 device behavior at over voltage condition in case of supply voltage greater than v load dump , logic part is clamped by zd az (35v min). and current through of logic par t is limited by external ground resistor. in addition, the powe r transistor switches off in order to protect the load from over voltage. permanent s upply voltage than v load dump must not be applied to vcc . 3.6.3 device behavior at low voltage condition if the voltage supply (v cc ) goes down under v cc (uv) , the device outputs shuts down. if voltage supply (v cc ) increase over v cc (cpr), the device outputs turns back on automatically. the device keeps off state after under voltage shutdown. the is output is cleared during off - state. 3.6.4 loss of ground protection in case of complete loss of the device ground connection, but connected load ground, the device securely changes to off if vin was initially greater than vih state or keeps off state if vin was initially lower than vil state. in case of device loss of ground, in and sen terminal will/ could/ might be at vcc voltage. v in i l v cc 0 0 0 t v out v cc(uv ) v cc(cpr ) ipd uc rl vcc is gnd ris rgnd in sen out rin rsen n-ch mosfet logic internal ground zd az zd az zd esd r esd r esd zd esd pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 14 of 39 may 22, 2015 3.6.5 short circuit protection turn - on in an over load co ndition including short circuit condition the device shut s down automatically when condit ion (a) is detected. the sense pin output iis,fault. shutdown is latched until the next reset via input pin . the device shuts down automatically when condition (b) is detected. the de vice restarts automatically in power limitation mode . the device shuts do wn automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode . the device starts current limitation when (d) is detected. the sense pin output iis,fault during power limitation mode or thermal toggling mode. ( a) il > il(sc) (b) deltatch > dtth (c) tch > atth (d) von > von( cl1 ) after td(cl) o ver l oad condition including s hort circuit condition during on - state the device runs automatically into power limitation mode when condition (a) is detected once after von < von(cl 2 ). the device shuts down automatically when condition (b) is detected. the device restarts automatically in power limitation mode . the device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal t oggling mode . the sense pin output iis,fault during power limitation mode or thermal toggling mode. (a) von > von(cl 2) (b) deltatch > dtth (c) tch > atth power limitation control current limitation control with il(cl) when auto restart from deltatch prote ction . during the current limitation operation and von>von(cl1) , t he sense pin outputs iis,fault. even auto restart from delta tch protection, if von pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 16 of 39 may 22, 2015 turn- on in an over load condition including short circuit condition (a) il > il(sc) in - > high tch > tth shutdown il(lim)=il(tt) yes thermal no dtch > dtth shutdown il(lim)=il(cl) yes no shutting down? yes thermal return b yes no no current limitation turn-on thermal il > il(lim) no yes thermal il > il(sc) yes shutdown by latch in = low a over current no over current b yes no a b over current no yes return turn - on n o il > il(nl) no von=von(nl) yes input input in = low yes no c return c in = low no yes turn-off thermal c c input input input yes before over current detection after over current detection exit from off - latch von < von(cl1) von < von(cl2) td(cl) unexpired pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 17 of 39 may 22, 2015 turn- on in an over load condition including short circuit condition (b) deltatch > dtth in - > high tch > tth shutdown il(lim)=il(tt) yes thermal no dtch > dtth shutdown il(lim)=il(cl) yes no shutting down? yes thermal return b yes no no current limitation turn-on thermal il > il(lim) no yes thermal il > il(sc) yes shutdown by latch in = low a over current no over current b yes no a b over current no yes return turn - on no il > il(nl) no von=von(nl) yes input input in = low yes no c return c in = low no ye s turn-off thermal c c input input input yes before dtcht detection during shutdowning by dtth detection during current limitation control exit from power limitation control power limitation control von < von(cl1) von < von(cl2) td(cl) unex pired pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 18 of 39 may 22, 2015 turn- on in an over load condition including short circuit condition (c) tch > atth in - > high tch > tth shutdown il(lim)=il(tt) yes thermal no dtch > dtth shutdown il(lim)=il(cl) yes no shutting down? yes thermal return b yes no no current limitation turn-on thermal il > il(lim) no yes thermal il > il(sc ) yes shutdown by latch in = low a over current no over current b yes no a b over current no yes return turn - on no il > il(nl) no von=von(nl) yes input input in = low yes no c return c in = low no yes turn-off thermal c c input input input yes before atcht detection during shutdowning by atth detection during current limitation control exit from power limitation control thermal toggling von < von(cl1) von < von(cl2) td(cl) unexpired pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 19 of 39 may 22, 2015 an over load condition which is include a short circuit condition during on - state (a) von > von(cl) with weak short condition in - > high tch > tth sh utdown il(lim)=il(tt) yes thermal no dtch > dtth shutdown il(lim)=il(cl) yes no shutting down? yes thermal return b yes no no current limitation turn-on thermal il > il(lim) no yes thermal il > il(sc) yes shutdown by latch in = low a over current no over current b yes no a b over current no yes return turn - on no il > il(nl) no von=von(nl) yes input input in = low yes no c return c in = low no yes turn-off thermal c c input input input yes be fore von(cl) detection after turn on during shutdowning by dtth detection during current limitation control exit from power limitation control power limitation control after von(cl) detection von < von(cl1) von < von(cl2) td(cl) unexpired pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 20 of 39 may 22, 2015 an over load condit ion including short circuit condition during on - state (a) von > von(cl) with dead condition in - > hi gh tch > tth shutdown il(lim)=il(tt) yes thermal no dtch > dtth shutdown il(lim)=il(cl) yes no shutting down? yes thermal return b yes no no current limitation turn-on thermal il > il(lim) no yes thermal il > il(sc) yes shutdow n by latch in = low a over current no over current b yes no a b over current no yes return turn - on no il > il(nl) no von=von(nl) yes input input in = low yes no c return c in = low no yes turn-off thermal c c input input input yes before von(cl) detection after turn on after over current detection exit from power limitation control after von(cl) detection von < von(cl1) von < von(cl2) td(cl) unexpired pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 21 of 39 may 22, 2015 an over load condition including short circuit condition during on - state (b) deltatch > dtth in - > high tch > tth shutdown il(lim)=il(tt) yes thermal no dtch > dtth shutdown il(lim)=il(cl) yes no shutting down? yes thermal return b yes no no current limitation turn-on thermal il > il(lim) no yes thermal il > il(sc) yes shutdown by latch in = low a over current no over curr ent b yes no a b over current no yes return turn - on no il > il(nl) no von=von(nl) yes input input in = low yes no c return c in = low no yes turn-off thermal c c input input input yes before dtth detection after turn on during shutdowning by dtth detection exit from thermal protection control von < von(cl1) von < von(cl2) td(cl) unexpired pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 22 of 39 may 22, 2015 an over load condition including short circuit condition during on - state (c) tch > atth in - > high tch > tth shutdown il(lim)=il(tt) yes thermal no dtch > dtth shutdown il(lim)=il(cl) yes no shutting down? yes thermal return b yes no no current limitation turn-on thermal il > il(lim) no yes thermal il > il(sc) yes shutdown by latch in = low a over current no over current b yes no a b over current no yes return turn - on no il > il(nl) no von=von(nl) yes input input in = low yes no c return c in = low no yes turn-off thermal c c input input input yes before atth detection after turn on during shutdowning by atth detection exit from thermal protection con trol von < von(cl1) von < von(cl2) td(cl) unexpired pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 23 of 39 may 22, 2015 3.6.6 device behavior at small load current conduction the device has a function which controls ron in order to improve kilis accuracy at small load current conduction. von (vcc - out) is proportionate to il under normal conditions. under il pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 25 of 39 may 22, 2015 i l i is,offset k ilis= i l /i is i is i l(cse) 2ua 5ua i l i is vcc - vis vcc is ris gnd vcc - vis vis vcc iis,fault 1kohm load line 9 ma 3.5 ma vcc vcc - vis vis current sense output the device output analog feedback current proportional to output current from is pin. in the case of much high er current than nominal load current, current sense output is saturat ed. in the case of much lower current than no minal load current, current sense output is above 5ua if output current is above il(cse) max, current sense output is below 2ua, iis,offset max, if output current is below il(cse) min. sense current under fault condition the device output iis ,fault, constant current, from is pin under fault condition such as after over current detection, during power limitation and during thermal toggling. iis,fault is specified with ris=1kohm condition. iis,fault is attenuated depends on vcc - vis voltage. op eration point as iis,fault output is also depends on ris condition. for example, in the case of ris=1kohm, iis,fault could be 3.5ma to 9ma, vcc - vis could be 4 .5v to 10v, vis could be 9v to 3.5v if vcc=13.5 v. in the case of ris is higher than 1kohm, operation point as iis,fault is lower than specified value but vis should be higher than ris=1kohm condition. pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 26 of 39 may 22, 2015 v in v out v sen iis tssen(off) tssen(on) tsis(off) tsis(lc) tsis(lc) tsis(on) v in v out v sen iis iis,fault tdsc(fault) over current detection sense current settling time fault signal delay time at over current detection pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 27 of 39 may 22, 2015 v in v out iis v sen short circuit appear short circuit disappear tdpl(fault) power limitation td pl(off) iis,fault v in v out iis v sen short circuit appear short circuit disappear tdpl(fault) thermal toggling td(off) tdpl(off) iis,fault tsis(off) power limitation fault signal delay time at power limitation fault signal delay time at thermal toggling pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 28 of 39 may 22, 2015 v in v out iis v sen tdop(fault) open load detection iis,fault tdop ope n load detection open load condition appear iis,offset iis,dis fault signal delay time at open load detection pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 29 of 39 may 22, 2015 3.6. 8 nominal load product nominal load nhd016c 2.0ohm 3.6. 9 driving capability driving capability is specified as load impedance. over current detection characteristics is designed below driving capability characteristics. if estimated load impedance which comes from peak inrush current is higher than driving capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown the output. depend on the con dition s, power limitation function may work during inrush current. if estimated load impedance which comes from peak inrush current is higher than driving capability characteristics, power limitation disappear within 30ms. this parameter does not mean that the device can drive the resistive load up to driving capability characteristics. driving capability: nhd016c :125 mohm von [v] il [a] 13.5 108 5 il(sc) characteristics il(sc) specified point nhd016c : 68 a t t vin il 30ms pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 30 of 39 may 22, 2015 v in v out 90% 10% ton toff 30 % 70 % dv/dton - dv/dtoff 10% t d( on ) 90% t d( o ff) 30 % 70 % 3.6.10 cross current protection in case of h - bridge high side usage in case of using high side driver in h - bridge c ircuit, high side driver protects high side driver itself and also low side driver from high power dissipation by cross current when low side driver switch ing on. 3.6.1 1 measurement condition switching waveform of out terminal m vcc out vcc out in in vbat o ff on off pwm on cross current motor current pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 31 of 39 may 22, 2015 3.7 package drawing 24- pin power hssop pd166026 t1k datasheet 3. specification r07ds1113ej0 2 00 rev. 2 .00 p age 32 of 39 may 22, 2015 3.8 taping information upd166026 t1k 3.9 marking information upd166026 t1k pd166026t1k datasheet 4. typical characteristics r07ds1113ej0 2 00 rev. 2 .00 p age 33 of 39 may 22, 2015 4. typical characteristics pd166026t1k datasheet 4. typical characteristics r07ds1113ej0 2 00 rev. 2 .00 p age 34 of 39 may 22, 2015 pd166026t1k datasheet 4. typical characteristics r07ds1113ej0 2 00 rev. 2 .00 p age 35 of 39 may 22, 2015 pd166026t1k datasheet 4. typical characteristics r07ds1113ej0 2 00 rev. 2 .00 p age 36 of 39 may 22, 2015 pd166026t1k datasheet 4. typical characteristics r07ds1113ej0 2 00 rev. 2 .00 p age 37 of 39 may 22, 2015 pd166026t1k datasheet 5. therm al characteristics r07ds1113ej0 2 00 rev. 2 .00 p age 38 of 39 may 22, 2015 5. thermal characteristics pd166026t1k datasheet 6. application example in principle r07ds1113ej0 2 00 rev. 2 .00 p age 39 of 39 may 22, 2015 6. application example in principle rin, rsen, ran values are in range of 2k to 50kohm depending microcontroller while r_l value is typically 4kohm. if necessary to raise hbm tolerated dose, adding resister between out terminal and ground is effective. resister s value is typically 100ko hm gnd network recommendation rgnd vbat vcc gnd vcc gnd vbat in case of v_loaddump < 35v in case of 35v < v_loaddump < 42v exte rnal diode is recommended in order to prevent reverse current to ward control logic part at reverse battery condition. note: if other component is installed to prevent reverse current at reverse battery condition, diode is not required in gnd network. not e: approx. 10kohm additional resistor in parallel with diode is recommended depends on vf - if performance of the diode. external diode and resistor are recommended in order to prevent reverse current to ward control logic part at reverse battery condition and limit the current through zd az at load dump condition . 100ohm is recommended as rgnd. all trademarks and registered trademarks are the property of their respective owners. c - 1 revision history rev. date description page summary 1.00 sep. 17 , 201 3 1 - 3 8 1st issue 2.00 may 22, 2015 23 "device behavior at small load current conduction" is add ed. notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operati on of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rig hts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". th e recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. 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